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| switching diode features z low forward voltage drop z fast switching maximum ratings @t a =25 parameter symbol limits unit non-repetitive peak reverse voltage dc blocking voltage v rm v r 30 v average rectified output current i o 200 ma power dissipation pd 150 mw junction temperature t j 125 storage temperature range t stg -65-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 30 v reverse voltage leakage current i r v r =25v 2 ua forward voltage v f i f =0.1ma i f =1ma i f =10ma i f =30ma i f =100ma 240 320 400 500 1000 mv total capacitance c t v r =1v,f=1mhz 10 pf reverse recovery time t r r i f =i r =10ma, i rr =0.1xi r ,r l =100 ? 5 ns sot-523 BAT54T/at/ct/st 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BAT54T/at/ct/st 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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